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Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by detection of an ESR signal with a g-value of 1.998, which corresponds to conduction...
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