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The introduction of a 39nm-gap capacitive transducer, voltage-controlled frequency tuning, and a stress relieving coupled array design has enabled a 0.09% bandwidth 223.4-MHz channel-select filter with only 2.7dB of in-band insertion loss and 50dB of out-of-channel interferer rejection. This amount of rejection is more than 23dB better than a previous capacitive-gap transduced filter design that did...
A voltage controlled electrical stiffness tuning method has been demonstrated to correct phase and amplitude mismatches between the constituent resonators in a half-wavelength (λ/2) mechanically coupled array-composite towards maximizing its output power. Via tuning, a nine-disk array-composite using 3 output resonators achieves an output current 2.91× larger than that of a single one of its constituent...
Quality factors (Q's) greater than 10,000 and higher than reported for any other sputtered AlN d31-piezoelectric micromechanical resonator have been demonstrated for the first time using an energy sharing mechanical circuit that mechanically couples two electrode-equipped AlN resonators with several electrode-less ones. The key enablers behind the described Q increase are 1) removal of metal electrodes...
A micromechanical displacement amplifier comprising two asymmetric resonator array composites coupled by a quarter-wavelength beam has been demonstrated that permits specification of gain factor by mere (digital) selection of an appropriate ratio of the number of resonators in an input array to that in an output array. Like the method, this displacement gain circuit is a key enabler for resoswitch-based...
A statistical comparison between the resonance frequency variations of stand-alone micromechanical disk resonators and mechanically-coupled array composites of them reveals that mechanically-coupled arraying of on-chip micromechanical resonators can very effectively enhance the manufacturing repeatability of resonance frequencies. In particular, twenty 3-disk resonator array-composites on a single...
Heterojunction barrier diode (HBD) detectors are introduced with optimized zero bias and room temperature performance at millimeter wave frequencies. Through careful device development and fabrication techniques they have been scaled successfully to micron size values and exhibit high dc responsivity of 17 A/W at zero bias with a low capacitance of 1.5 fF/um2. At 100 GHz they have been shown to have...
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