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We demonstrate the first sub-100 µm, 10 Gb/s Si MZI optical modulator. Slow-light photonic crystal waveguides enable carrier-depletion, near-error-free modulation in a 90 µm device by a 4.3 Vpp drive signal, with 17 nm bandwidth.
We demonstrate a 90 µm, 40 Gb/s silicon MZI modulator, exploiting large group index (>30) slow-light photonic crystal phase-shifters at 5.3 Vpp drive voltage. We also demonstrate a 50 µm device with 12.5 nm bandwidth.
We demonstrate 10 Gb/s modulation in a 200 photonic crystal silicon optical modulator, in both carrier-injection and depletion modes. In particular, this is the first demonstration of 10 Gb/s modulation in depletion mode and without pre-emphasis, in a Mach–Zehnder type modulator of this length, although moderate pre-emphasis can improve the signal quality. This is made possible by utilizing...
We demonstrate 5 Gbps modulation in a 200 μm-length photonic crystal Mach-Zehnder modulator, fabricated using CMOS processes. VлL < 0.029 V. cm was observed under DC operation. RF modulation was performed at 2.2 V peak-to-peak.
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