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The characteristics of 0.15 mum In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance...
The characteristics of 0.15- mum InAlAs/InGaAs pseudomorphic high-electron mobility transistors (p-HEMTs) that were fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology were investigated. As compared with the RIE, the ALET used a much lower plasma energy and thus produced much lower plasma-induced damages to the surface...
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