The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The elaboration of polymer guiding structures in passive and active optoelectronic components needs an etching stage. As high anisotropy is required for the etching process, the use of a low energy ion beam proves to be better than etching techniques by wet process. Thus, we developed two etching techniques called reactive ion beam etching (RIBE) and ion beam assisted etching (IBAE) which use, in...
Etching of a fluorinated polyimide (6FDA-ODA) was realized by the IBAE (Ion Beam Assisted Etching) technique which uses an inert ion beam (Ar + for example) to carry a reactive flux (oxygen for example) towards the target.This ion beam reactive etching enables us to obtain etching rates of about 60 nm/min by maintaining a pressure of about 10 −4 Torr in the irradiation chamber.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.