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The effects of mechanical tensile and compressive stress on dual‐gate amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) on a flexible substrate were investigated. Both the tensile and compressive stresses led to increases in free electrons and deep states in a‐IGZO. Strong tensile stress tends to form more deep defects than compressive stress, resulting in severe deterioration in performance...
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