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From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the...
We present a theoretical study on mechanism of redshift in InAs/InxGa(1-x)As quantum dots, of which redshift is realized via controlling In composition x and lower confining layer thickness t to ease up the enlargement of band gap due to strain. Introducing In component in the confining layer material leads to significant redshift but thermal quenching due to waning band discontinuity, therefore proper...
A theoretical analysis of wetting layer effect on electronic structures of InAs/GaAs truncated-pyramid quantum dots is carried out using an eight-band Fourier transform-based k·p method. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot.
High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects...
InSbN p-n junctions are fabricated by direct implantation of N+ and Mg+ into InSb wafers and their electrical and optical properties are characterized. It is found that high quality p-n junctions can be formed and they can absorb photons to form photocurrent. Furthermore, the peak and cut-off wavelengths absorbed can be controlled by monitoring the incorporated nitrogen and the measured peak wavelengths...
The characteristics of a resonant cavity-enhanced InGaAs/GaAs quantum-dot n-i-n photodiode with only a bottom distributed Bragg reflector used as the cavity mirror, are reported. To suppress the dark current, an AlAs layer is inserted into the device structure as the blocking layer. It turns out that the structure still possesses the resonant coupling nature, and makes Rabi splitting discernible in...
High-efficiency multifunction solar cells are attracting a great deal of attention for both space and terrestrial applications. We proposed the monolithic integration of the II/VI (ZnCdMg)(SeTe) and the III/V (InAlGa)(AsSb) material systems for multijunction solar cells. These material systems have direct bandgap, zinc blende, quaternary alloys, lattice-matched to GaSb substrates that cover the entire...
Single-mode, continuous-wave, electrically-injected, GaSb based, 2.1 mum, equilateral-triangle-resonator lasers with a wavelength tuning range of 3.25 nm are demonstrated at 77 K.
InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
An InGaAs light emitting diode monolithically integrated with a suspended lens is proposed as a prototype semiconductor electroluminescence refrigeration device. Simulations predict that a temperature drop up to 6degC is achievable in this device.
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