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The impact of La2O3/InGaAs MOS interfaces on the performance of InGaAs MOSFETs and the physical origins are systematically investigated. It is found that La2O3/ InGaAs MOSFETs exhibit lower S. S. and lower carrier trapping properties, while have lower mobility than Al2O3/ InGaAs MOSFETs because of higher fixed oxide charge density. Also, it is experimentally found for the first time that ALD La2O3...
The paper have demonstrated the effect of the resistivity reduction of the atomic layer deposited (ALD) TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and post deposition annealing (PDA) processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending NH3 exposure time and increasing PDA temperature by 700°C. Moreover, by employing...
Fluorescent soft X-ray emission spectroscopy (XES) is used to study chemical reactions in polyimide (PI), polyethersulphone (PES) and polycarbosilane (PCS) films induced by ion-beam mixing. It is found that the fine structure of the carbon XES of the PI and PES films is modified after irradiation with fluences above 1x10 14 cm -2 , which is attributed to the degradation of...
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