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A 55nm node low standby power/generic CMOS technology is demonstrated. The transistor deploys the combination of high-k gate dielectric film and process-induced stress technologies. It features high drive currents with low leakage, wide coverage of transistor performance and process simplicity. Ion of 525/295 muA/mum at Ion of 20 muA/mum and Ion of 780/400 muA/mum at Ioff of 3 nA/mum with supply voltage...
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