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The diffusion-controlled growth of niobium silicides (NbSi 2 and Nb 5 Si 3 ) was studied in Nb/Si and Nb/NbSi 2 bulk diffusion couples annealed at 1200-1350 o C for 2-24 h. Both compounds were found to grow as parallel layers, according to the parabolic rate law. The concept of the integrated diffusion coefficient is used to describe the growth kinetics of the...
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