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Traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT with SiO2 gate dielectric were characterized. Hysteresis in ID-VG was observed at elevated temperature (∼120 oC) due to the traps. To understand the traps, current transient in drain was investigated at given gate and drain pulses with different temperatures. Two groups of time constants were extracted: one is nearly...
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