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Robust multi‐level spin memory with the ability to write information electrically is a long‐sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy‐efficient magnetization switching is achieved in a single‐material device formed of van‐der‐Waals (vdW) topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny...
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