The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We propose a process combining metal-assisted chemical etching and a spacer patterning technique to fabricate dense, vertical silicon nanotubes (SiNTs) with sub-60 nm wall thickness, which may have potential advantages for various devices. Moreover, we investigate the effect of the etch rate controlled by the mixture solution ratio to obtain SiNTs with ideal morphology. The fabricated high aspect...
An ultrathin junctionless (JL) charge trap flash (CTF) thin-film transistor (TFT) with a sub-2 nm thick poly-Si channel is demonstrated for 3D stacked flash memory. It provides the excellent memory performance of faster program/erase (P/E) speed, larger memory window (>12 V), and better endurance (>104 cycles) than inversion-mode (IM) devices; this device also has excellent 10-year data retention...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.