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We study silicon anisotropic etching using tetramethyl ammonium hydroxide (TMAH) containing Si and several oxidizing agents. We focus on the Al etch rate (ER) and the formation of micropyramids. In addition to the previously reported TMAH with Si and ammonium persulfate, Si anisotropic etching without Al etch can be achieved by dissolving Si and ammonium nitrate in TMAH. By surface analysis of the...
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