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We report on the optoelectronic properties of individual PbS nanowires prepared by gas-phase substitution reaction of pregrown CdS nanowires. The PbS nanowires synthesized by this method were found to be single crystals with high quality. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 62-nm-thick PbS nanowire field-effect transistors (FETs)....
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