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In this study, the use of intrinsic and highly insulating ZnO buffer layers to achieve high conversion efficiencies in CdSeTe/CdTe solar cells is reported. The buffer layers are deposited on commercial SnO2:F coated soda‐lime glass substrates and then fabricated into arsenic‐doped CdSeTe/CdTe devices using an absorber and back contact deposited by First Solar. The ZnO thickness is varied from 30 to...
As the electron transport layer in quantum dot light‐emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge‐imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in‐depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based...
Quantum Dot Light‐Emitting Diodes
In article number 2307298, Xiao Wei Sun and co‐workers improved quantum dot light‐emitting diodes (QLEDs) by thiol ligands of ZnO. ZnO nanocrystals were modified to reduce electron excess without hindering charge injection. This modification strategy significantly enhanced QLED performance, achieving an external quantum efficiency of over 23% and a long lifetime of...
Suppressing dendrite growth in zinc (Zn) anodes for aqueous Zn batteries remains a significant challenge. Modifying the Zn/electrolyte interface stands out as one of the most promising strategies to tackle this problem. In this study, a nanometer‐thick ZnO coating layer with a uniform concave surface geometry is in situ constructed to modify the Zn anode for the first time. The chemical bond formed...