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The structure and thermal stability of self-assembled InAs/GaAs quantum dots (QDs) grown by atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) QDs were studied using high-resolution electron microscopy with in situ heating experiment capabilities. The ALE QDs were larger and more regular shaped than MBE QDs because of the higher diffusivity of In compared with that of InAs in MBE growth....
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