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2D numerical simulation of normally-off 4H-SiC Trenched and Implanted VJFET is performed using Sentaurus TCAD simulator. Transport equations and different physical models are employed for exploring the device characteristics. Dynamic and static characteristics are simulated under various channel widths (0.81-0.93μm, step 0.03μm). At a channel width of 0.93μm, forward drain current of 5.77 A is observed...
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