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A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high‐performance photodetectors. However, graphene/n‐Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial...
Highly sensitive photodetectors based on a graphene‐silicon heterojunction with interface improvements are demonstrated by X. M. Li, H. W. Zhu, Y. Fang, and co‐workers on page 595. By introducing a thin, interfacial oxide layer for dark current suppression, the graphene‐silicon photodetector exhibits the highest‐reported detectivity for a planar graphene‐silicon heterojunction photodetector. This...
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