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Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous Si x N y layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain...
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