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Ge-MOS capacitors were fabricated by a novel method of ultra-thin SiO 2 /GeO 2 bi-layer passivation (BLP) for Ge surface combined with the subsequent SiO 2 -depositions using magnetron sputtering. For the Ge-MOS capacitors fabricated by BLP with O 2 , to decrease oxygen content in the subsequent SiO 2 deposition is helpful for improving interface quality. By...
Photoluminescence (PL) and dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) evaluations were performed for SiGe layers on insulator fabricated using Ge condensation by dry oxidation. Defect generation and transformation during the temperature ramp-up process were studied by PL. Band–band transition PL peaks were clearly observed for the as-grown wafers and the peak...
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