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A method of Al 2 O 3 deposition and subsequent post-deposition annealing (Al 2 O 3 -PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al 2 O 3 -PDA on defect passivation was clarified by surface analysis and electrical...
SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (N A ) in SGOI layer and interface-trap density (D it ) at SGOI/buried oxide (BOX) interface were found by using back-gate metal–oxide–semiconductor field-effect transistor method. For the reduction of high N A and D it ,...
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