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Multivariate plasma etch modeling and control methodology are presented based on 65 and 45 nm gate production data utilizing wafer-to-wafer tool-level scatterometry. The selection of etch recipe variables for optimal control of wafer-to-wafer profile, within-wafer CD, and chamber-to-chamber CD is demonstrated and validated based on wafer-to-wafer, within wafer, and chamber matching experiments.
The selective etching of Si over SiO2 in a CF4/O2 plasma has been studied using simulation and optimization. A showerhead plasma reactor was modeled as a well-mixed reactor, which was follwed by development of an otimal recipe. The optimizer, based on the generalized reduced gradient method, calculated optimal etch recipes using a set of mean values for the uncertain parameters. The-optimal end-point...
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