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An approach of growing crack-free GaN-based InGaN-multiple quantum wells (MQWs) with emission at 365 nm on AlN template, instead of conventional GaN template, by metal-organic chemical vapor deposition is presented. The AlN template used here was grown on the vicinal 2° misoriented sapphire substrate. Scanning electron microscopy and atomic force microscopy investigation show that cracks do not form...
High quality single crystalline n-type ZnO film was grown on p-type GaN substrate using molecular beam epitaxy. Transmission electron microscopy reveals a sharp ZnO/GaN interface. Light-emitting diode was fabricated from this heterostructure, and a turn-on voltage of ~3.4V was demonstrated. We found that the emission peak shifts from violet (430nm) to near-ultraviolet (375nm) when the driving current...
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