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Inherent cell variation of phase change memory is difficult to control by material or device engineering alone. We previously reported R-I curve shift detection scheme as a good method for monitoring PCM cell characteristics. This paper extends that concept and proposes a Stress-trim procedure to tighten R-I characteristics for PCM MLC operation. By leveraging the right-shift phenomena of PCM R-I...
We study the effect of programming current on the endurance failure of phase change memory and propose a general scheme of optimizing programming currents for the most endurance cycles. We consider two major endurance failure modes, stuck-SET and open failure. We show that higher current does not necessarily cause, and even prevents the earlier open failure and attribute it to phase-dependent open-failure...
Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly...
For the first time we demonstrate that a Phase Change Memory (PCM) packaged chip can hold pre-coded data after an industrial standard lead free solder bonding reflow process. Good “0” and “1” state distributions are retained in a 90nm 128Mb PCM chip after the soldering process. Furthermore, the tested chip endures more than 10 million write cycles after the pre-coding and high temperature process.
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