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An ultra wideband RF-MEMS shunt switch with a PZT/HfO2 stacked insulator has been developed for microwave and millimeter wave applications. The both of the conjunctive dielectric constant, 80, of PZT(r=800)/HfO2(r=20) stack layer and a match circuit contribute to high isolation of -30 dB at ultra wideband from 1 GHz to 50 GHz frequencies. The increase of the trap density in the HfO2 layer caused...
Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO2 dielectric was suggested for the application of RF shunt switch. The HfO2 dielectric prepared in this work had the breakdown field higher than 20 MV/cm. The RF switch using 45-nm-thick...
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