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P-type silicon wafers (100) with resistivities of 0.1–0.9 Ω cm were electrochemically etched in 2% HF solution at 0.7077 mA cm−2. The photoluminescence (PL) spectra for each wafer were monitored in situ using a low power 325 nm (He/Cd Laser) source and detected with a charged coupled detector (CCD) system. Three bands at 540 nm, 570 nm, and 612 nm were observed in the photoluminescence spectra. The...
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