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Recently, monoalkyl oxo‐hydroxo tin clusters have emerged as a new class of metal‐oxide resist to support the semiconductor industry's transition to extreme ultraviolet (EUV) lithography. Under EUV exposure, these tin‐based clusters exhibit higher performance and wider process windows than conventional polymer materials. A promising new monoalkyl precursor, [(BuSn)12O14(OH)6][OH]2 (BuSn), is still...
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