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An epitaxial, laterally‐overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high‐dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal‐organic (MO) CVD. The GaN layer on the N+ ion‐implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much...
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