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We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.
Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.
We provide a discussion of the Controller Area Network (CAN) networking protocol as used in space applications and then report the results of destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL72027SEH CAN bus transceiver. We conclude with a brief discussion of 60Co total ionizing dose (TID) testing results.
We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL75052SEH low dropout regulator (LDO) together with a discussion of electrical specifications and fabrication process.
We report the results of destructive and nondestructive heavy ion single-event effects (SEE) testing of the Intersil ISL71840SEH hardened 16-channel analog multiplexer, prefaced by a brief discussion of its functionality, electrical specifications and fabrication process.
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing,...
We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL70444SEH hardened operational amplifier together with a discussion of the part's electrical specifications and wafer fabrication process.
We report the results of low and high dose rate 60Co total dose testing of the Intersil ISL71590SEH integrated temperature sensor together with a brief discussion of the part's electrical specifications and wafer fabrication process. We also report data for the part's performance in the single-event effects (SEE) and displacement damage (DD) environments. The part is shown to offer significantly improved...
We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.
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