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This paper presents a co-process technology of the through silicon via (TSV) and embedded IC for 3D heterogeneous IC integration. Heterogeneous ICs are embedded by using silicon cavities and advanced TSVs for 3D interconnection are integrated in the interposer at the same time. Organic lamination is used to fill the gap and make an insulation layer. A laser drilling process is used to make via interconnections...
In this paper, an embedded passive and active package is developed by using silicon substrates. Embedded passives are integrated on the silicon substrate or laminated organic using thin-film processes, and active devices are embedded in the silicon using cavity structures. Organic lamination processes are used for filling the gap between IC and silicon and also, it is possible to realize thick insulation...
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