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In this paper, we study the influence of current localization on the isolation between two antennas in a compact terminal setting. The two antennas are chosen to be a monopole and a PIFA. The degree of current localization is controlled by the permittivity value of the PIFA's dielectric loading. Both lossless and lossy cases are simulated in order to ascertain the underlying performance impact from...
III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the...
During technology development, the study of ultra low-k (ULK) TDDB is important for assuring robust reliability. As the technology advances, several critical ULK TDDB issues were faced for the first time and needed to be addressed. First, the increase of ULK leakage current noise level induced by soft breakdown during stress was observed. Second, it was found that ULK had lower field acceleration...
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