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The amorphous-nanocrystalline silicon thin films doped with about 10% of hydrogen (a-nc-Si), 50–100nm thick, were deposited by plasma enhanced chemical vapor deposition (PECVD) on glass covered with amorphous Si:H, using mixture of silane and hydrogen as working gas. The power of discharge was either constant or it was decreased during deposition, starting with higher values than average and ending...
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