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As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale‐resolution in operando X‐ray transmission spectromicroscopy is used by J. P. Strachan and co‐workers, as reported on page 2772, to directly observe oxygen migration and clustering, revealing an important operation and failure mechanism of RRAM, a frontrunner...
Oxygen migration in tantalum oxide, a promising next‐generation storage material, is studied using in operando X‐ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring‐like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical...
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