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The conducting metal filament formation process of a typical resistive switching memory is comprehensively studied using Kinetic Monte Carlo simulation, which includes multiple physical and chemical mechanisms. The characteristics of the forming voltage, forming time and the so called "Voltage-time dilemma" are investigated. In addition filament topographies, which strongly influence device...
The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called “voltage–time dilemma” is simulated and studied...
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