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We have grown p-type ZnTe films on (100) ZnTe at a relatively low growth temperature by atmospheric pressure metal organic vapor phase epitaxy using triethylarsine. The dopant transport rate and the transport rate ratio of diethyltelluride to dimethylzinc strongly influence the photoluminescence spectrum of the film. Even for the film grown at low dopant transport rate of 0.01μmol/min, the spectrum...
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