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A novel MOS-controlled silicon carbide (SiC) thyristor device, the SiC emitter turn-off thyristor (ETO), as a promising technology for future high-voltage and high-frequency switching applications has been developed. The world's first 4.5-kV SiC p-type ETO prototype based on a 0.36 cm2 SiC p-type gate turn-off (GTO) shows a forward voltage drop of 4.6 V at a current density of 25 A/cm2 and a turn-off...
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