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A well-controlled technique for high-temperature epitaxial growth on 6H-SiC(0001) substrates is shown to allow the development of monolayer graphene that exhibits promise for precise metrological applications. Face-to-face and face-to-graphite annealing in a graphite-lined furnace at 1200 –2000 with a 101-kPa Ar background gas lowers the rates of SiC decomposition...
Epitaxial growth of graphene layers on 6H-SiC(0001) substrates are studied to improve the performance of graphene for metrological applications. A face-to-face (FTF) annealing method at 2000 °C in an Ar background atmosphere are used to inhibit the rates of SiC decomposition and Si sublimation and thus control the graphene layer development. Sample surface morphology and its relation to changes in...
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