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Thin films of cobalt oxide were made by atomic layer deposition (ALD), using Co(thd) 2 (Hthd = 2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on soda–lime glass and single crystals of Si(100). Pulse and purge parameters for ALD-type growth were established and such growth was found to occur for depositions within the temperature range of 114–307 °C. A preferred...
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