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Amorphous GaN (a-GaN) films were fabricated at room temperature using pulsed-laser ablation. The surface structure and chemical composition of the deposited films were strongly dependent on the Ar gas pressures and pulsed laser energies. The films deposited at the pressure of 10 Pa with 34 mJ/pulse were composed of an amorphous phase with a smooth surface. Under the same pressure, an increase in laser...
B C N nanotubes prepared by a flush evaporation method using a d.c. arc plasma were mainly characterized by transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The nanotubes obtained were divided into three types, such as carbon-, boron nitride-, or carbon nanotubes surrounded with boron nitride nanotubes. These types of nanotubes were obtained at temperatures higher...
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