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The photoluminescence (PL) properties corresponding to different types of the interstitial clusters (or defects) in the silicon ion (Si+) self-implanted Si have been well reviewed. Given a brief of the conjectural origin, defect type, annealing temperature of the W (1218 nm), X (1193 nm) peak, R (1376 nm), and D bands concluded the present application of Si+ self-ion-implantation. The challenges for...
The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2...
Recently, Ge has been intensively studied as a light emission material that emits at ~1.5 μm, as it has been theoretically proven to be a promising candidate to realize Si-based light source for on-chip and chip-to-chip communications. In this paper, photoluminescence (PL) is reported from heavily phosphorus (P)-implanted epitaxial Ge thin films on Si. Sheet resistance has been measured to characterize...
This work explored a novel way to synthesize silicon carbide (SiC). Carbon ions at tens of keV were first implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using heavy xenon ion beams at high energy of 4 MeV with fluences of 5 ?? 1013 and 1 ?? 1014 ions/cm2 at elevated temperatures to play a role of annealing as an alternative of high-temperature thermal...
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