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Double barrier structure with silicon layer instead of metal can potentially enable variety of intriguing applications of such a structure. The observations so far have pointed out that behavior of such structures during high temperature process may depend on availability of oxygen. It can potentially influence the result of race for silicon atoms between recrystallization and oxidation processes...
This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model...
The aim of this work is the experimental study of potential possibilities of oxidation in r.f. (13.56 MHz) plasma application for the formation of ultrathin (<10 nm) oxide layers.
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