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Recent developments in CMOS devices such as FinFET, FDSOI or stacked nanowire FETs (SNWFETs) have led the industry to consider increasingly complex integration processes while aiming at smaller and smaller devices. This paper proposes new concepts of device integration based on the use of hydrogen silsesquioxane (HSQ). Recently employed to replace polysilicon sacrificial gate in gate last processes,...
We report on vertically stacked horizontal Si NanoWires (NW) /»-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated with inner spacers and SiGe source-drain (S/D) stressors. Recessed and epitaxially re-grown SiGe(B) S/D junctions are shown to be efficient to inject strain into Si/-channels. The Precession Electron Diffraction (PED)...
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345 nA/mum and Ioff=30 nA/mum at -1 V for a 50 nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow...
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