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The dielectric properties of rapid thermally NH/sub 3/-nitrided (RTN) ultrathin ( approximately=5 nm) SiO/sub 2/ films have been investigated. High-field endurance characteristics indicate that after Fowler-Nordheim electron injection, both the low-field leakage current and electron trap density increase. Moreover, the oxide leakage is strongly dependent on the NH/sub 3/-nitridation time. These results...
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