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The behaviour of 3.5 nm-thick thermal SiO/sub 2/ films under high-field (>14 MV/cm) electrical stress is measured. During the stress, time-dependent oxide wearout, which arises via three step processes, has been observed for small-area MOS tunnel diodes. The results showed that stress-induced anomalous conduction, in which the barrier height drops to 0.7 eV, arises in the final degradation process...
The dielectric properties of rapid thermally NH/sub 3/-nitrided (RTN) ultrathin ( approximately=5 nm) SiO/sub 2/ films have been investigated. High-field endurance characteristics indicate that after Fowler-Nordheim electron injection, both the low-field leakage current and electron trap density increase. Moreover, the oxide leakage is strongly dependent on the NH/sub 3/-nitridation time. These results...
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