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We have experimentally studied the passive Q-switching performance of a Nd:YAG ceramic laser with GaAs saturable absorber. Depending on the laser intensity in the GaAs wafer, the Q-switched laser showed much different performance. The shortest pulse obtained has 4.7 ns pulse width, 6.25 muJ pulse energy and 1.33 kW peak power.
By using GaAs as an output coupler as well as a saturable absorber, we demonstrated a diode-pumped passively Q-switched Yb:YAG laser at room temperature. At an incident pump power of 12.2 W, stable laser pulses of duration of 15.5 ns and energy of 75.6 μJ were generated at a repetition rate of 7.3 kHz. Effects of output coupling on the laser performance were investigated with a GaAs wafer that was...
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