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The S/D-to-silicide contact resistivity is accurately extracted from state-of-the-art CMOS devices based on a new extraction methodology featuring parasitic and geometric corrections. With this sensitive extraction methodology and advanced S/D formation processes, low 10-8 Omega-cm2 CMOS contact resistivity meeting 2007 ITRS projection for sub-20 nm technologies is demonstrated. In the quest for less...
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