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Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties...
This paper reports on lateral nanoelectromechanical (NEM) relays based on variations of a two- or three-mask titanium nitride (TiN) sidewall stringer process. Electrically isolated TiN perimeter beams are fabricated from stringers formed on the inside walls of polysilicon trenches, yielding 200 nm wide TiN fins and 200 nm gaps; these dimensions are 3X smaller than the resolution limit of the optical...
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