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High‐quality graphene polycrystalline films are directly synthesized on dielectric silicon nitride substrates by using two‐stage metal‐catalyst‐free chemical vapor deposition. Thus large‐scale electronic devices are easily fabricated on these films without complicated transfer processes and their associated problems. The method is compatible with current Si processing techniques. Further details can...
By using two‐stage, metal‐catalyst‐free chemical vapor deposition (CVD), it is demonstrated that high‐quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V−1 s−1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal‐catalyzed graphene, reflecting the...
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