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In article 1901466, Bo Chi, Gregory J. Wilson, and co‐workers investigate superior electronic properties of nanostructured tin (IV) oxide (SnO2) as an ideal inorganic electron transport layer (ETL) in n–i–p perovskite solar cells. The bilayer ETL architecture attaining impressive power conversion efficiency (PCE) greater than 20% is depicted.
Nanostructured tin (IV) oxide (SnO2) is emerging as an ideal inorganic electron transport layer in n–i–p perovskite devices, due to superior electronic and low‐temperature processing properties. However, significant differences in current–voltage performance and hysteresis phenomena arise as a result of the chosen fabrication technique. This indicates enormous scope to optimize the electron transport...
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